| PART |
Description |
Maker |
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYM7V73A1601BTFG HYM7V73A1601BTFG-75 |
x72 SDRAM Module x72内存模块
16Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 128MB
|
TE Connectivity, Ltd.
|
| IS42RM32400E |
128Mb Mobile Synchronous DRAM
|
ISSI
|
| HYM71V16M755HCLT6-8 |
SDRAM - SO DIMM 128MB
|
Hynix Semiconductor
|
| HYM71V16M635HCLT8-H |
SDRAM - SO DIMM 128MB
|
Hynix Semiconductor
|
| GMM27316230ETG GMM27316233ENTG-7K |
x72 SDRAM Module x72内存模块
16Mx72|3.3V|75/7K|x18|SDR SDRAM - Registered DIMM 128MB 16Mx72 | 3.3 | 75/7K | x18 | SDRAM的特别提款权-注册128MB的内
|
ITT, Corp.
Mini-Circuits
|
| EBD13UB6ALS-75 EBD13UB6ALS-7A EBD13UB6ALS EBD13UB6 |
128MB DDR SDRAM S.O. DIMM
|
Elpida Memory
|
| W3DG6417V7D2 W3DG6417V10D2 W3DG6417V75D2 W3DG6417V |
128MB - 16Mx64, SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3DG6418V7D1 W3DG6418V75D1 W3DG6418V10D1 W3DG6418V |
128MB - 16Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3DG6416V7D1 W3DG6416V75D1 W3DG6416V10D1 W3DG6416V |
128MB- 16Mx64 SDRAM, UNBUFFERED
|
http://
White Electronic Designs Corporation
|
